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2

isc Silicon NPN Darlington Power Transistor

2SD1895

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 30mA; IB= 0

140

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 7A; IB= 7mA

2.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 7A; IB= 7mA

3.0

V

ICBO

Collector Cutoff Current

VCB= 160V; IE= 0

100

μ

A

ICEO

Collector Cutoff Current

VCE= 140V; IB= 0

100

μ

A

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

100

μ

A

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

2000

hFE-2

DC Current Gain

IC= 7A; VCE= 5V

5000

30000

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

20

MHz

Switching Times

ton

Turn-on Time

IC= 7A; IB1= IB2= 7mA,

VCC= 50V

2.0

μ

s

tstg

Storage Time

6.0

μ

s

tf

Fall Time

1.2

μ

s



hFE-2 Classifications

Q

P

5000-15000

8000-30000

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The

information contained herein is presented only as a guide for the applications of our products.

ISC products are intended for usage in general electronic equipment. The products are not designed for use in

equipment which require specialized quality and/or reliability, or in equipment which could have applications in

hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be

used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does

ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages.