isc N-Channel MOSFET Transistor

2SK2148-01

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0; ID= 1mA

600

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID=1mA

2.5

3.0

3.5

V

VSD

Diode Forward On-Voltage

IF=2 IDR ;VGS= 0

1.05

1.58

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 6A

0.55

0.75

Ω

IGSS

Gate-Body Leakage Current

VGS= ±30V;VDS= 0

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 600V; VGS= 0

500

µA

Ciss

Input Capacitance

VDS=25V;

VGS=0V;

fT=1MHz

2500

3800

pF

Crss

Reverse Transfer Capacitance

50

75

Coss

Output Capacitance

220

330

tr

Rise Time

VGS=10V;

ID=12A;

VDD=300V;

RGS=10Ω

60

90

ns

td(on)

Turn-on Delay Time

30

45

tf

Fall Time

80

120

td(off)

Turn-off Delay Time

140

210

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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