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KSC5402DT Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # KSC5402DT
Description  Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSC5402DT Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
KSC5402DT
www.iscsemi.com
1
DESCRIPTION
· Collector-Emitter Breakdown Voltage
-V(BR)CEO= 1000V(Min)
· Collector-Emitter Saturation Voltage
-VCE(sat):= 0.6V(Max) @IC= 0.4A
APPLICATIONS
· Low frequency amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current (Pulse)
5
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
3
2
1
TO-220C Package
Pin 1 Base
2 Collector
3 Emitter


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