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NTMFS4833N Datasheet(PDF) 3 Page - ON Semiconductor

Part # NTMFS4833N
Description  Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4833N Datasheet(HTML) 3 Page - ON Semiconductor

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NTMFS4833N
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
−
0.8
1.0
V
TJ = 125°C
−
0.68
−
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
−
38
−
ns
Charge Time
ta
−
19
−
Discharge Time
tb
−
19
−
Reverse Recovery Charge
QRR
−
36
−
nC
PACKAGE PARASITIC VALUES
Source Inductance
LS
TA = 25°C
−
0.50
−
nH
Drain Inductance
LD
−
0.005
−
nH
Gate Inductance
LG
−
1.84
−
nH
Gate Resistance
RG
−
1.0
−
W
5. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.



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