Silicon NPN Power Transistor

2SC5808

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation

Voltage

IC= 1.2A; IB= 0.24A

--

--

0.8

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1.2A; IB= 0.24A

--

--

1.5

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IB= 0

700

--

--

V

V(BR)CEO

Collector-Emitter Breakdown

Voltage

IC= 4mA; IB= 0

400

--

--

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

8

--

--

V

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

--

--

10

uA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

--

--

10

uA

hFE1

DC Current Gain

IC= 0.3A; VCE= 5V

20

--

50

hFE2

DC Current Gain

IC= 1.2A; VCE= 5V

10

--

--

hFE3

DC Current Gain

IC= 1mA; VCE= 5V

10

--

--

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

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