STFV4N150 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STFV4N150

Description	N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Electrical characteristics

STFV4N150

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS = 0

1500

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

VDS = Max rating,TC = 125°C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30V

± 100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 2A

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward transconductance VDS = 30V , ID = 2A

3.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

1300

120

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 600V, ID = 4A,

VGS = 10V

(see Figure 15)

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