STTH806DTI_05 datasheet(2/6 Pages) STMICROELECTRONICS

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STTH806DTI

2/6

THERMAL RESISTANCE

STATIC ELECTRICAL CHARACTERISTICS

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF

(RMS)

DYNAMIC CHARACTERISTICS

TURN-ON SWITCHING CHARACTERISTICS

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

2.6

°C/W

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 125°C

100

VF **

Forward voltage drop

Tj = 25°C

IF = 8A

3.6

Tj = 150°C

1.95

2.4

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = -50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 8A

VR = 400V

dIF/dt = -200 A/µs

45.5

Reverse recovery

softness factor

0.4

Qrr

Reverse recovery

charges

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

tfr

Forward recovery

time

Tj = 25°C

IF = 8A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

200

VFP

Forward recovery

voltage

Tj = 25°C

IF = 8A

dIF/dt = 100 A/µs

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