Philips Semiconductors

PHT2NQ10T

N-channel TrenchMOS transistor

Product data

Rev. 01 — 16 October 2001

6 of 12

9397 750 08918

© Koninklijke Philips Electronics N.V. 2001. All rights reserved.

Fig 6.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 7.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 9.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ag28

0

2

4

6

8

10

01

23

45

(A)

6 V

6.5 V

4.5 V

5 V

5.5 V

7 V

03ag30

0

2

4

6

02

46

8

(A)

150ºC

03ag29

0.1

0.2

0.3

0.4

0.5

0.6

02468

10

(

Ω)

10 V

6.5 V

7 V

03aa29

0

0.5

1

1.5

2

2.5

3

-60

0

60

120

180

Tj (

a

a

R

DSon

R

DSon 25 C

°

()

----------------------------

=