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STPS15H100C Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS15H100C Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STPS15H100C 2/8 1 Characteristics When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.58 x IF(AV) + 0.012 IF 2 (RMS) Table 2. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 4 °C/W Total 2.4 Rth(c) Coupling 0.7 Table 3. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% Reverse leakage current Tj = 25° C VR = VRRM 3µA Tj = 125° C 1.3 4 mA VF(1.) Forward voltage drop Tj = 25° C IF = 7.5 A 0.8 V Tj = 125° C IF = 7.5 A 0.62 0.67 Tj = 25° C IF = 12 A 0.85 Tj = 125° C IF = 12 A 0.68 0.73 Tj = 25° C IF = 15 A 0.89 Tj = 125° C IF = 15 A 0.71 0.76 |
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