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PIP3207-DC Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PIP3207-DC
Description  TOPFET dual high side switch
PDF  9 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PIP3207-DC Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3207-DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40˚C
≤ T
mb ≤ 150˚C and typicals at Tmb = 25˚C.
Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Undervoltage
V
BG(UV)
Low supply threshold voltage
1
2
4.2
5.3
V
∆V
BG(UV)
Hysteresis
0.1
0.5
1
V
Overvoltage
V
BG(OV)
High supply threshold voltage
2
35
40
45
V
∆V
BG(OV)
Hysteresis
0.4
1
2
V
I
BG(OV)
Operating current per channel
V
BG > VBG(OV)
-1
2
mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V
≤ V
BG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25˚C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
V
BL = VBG; tp = 300 µs
I
L(lim)
Load current limiting
V
BG ≥ 8 V
18
30
42
A
V
BG = 5.5 V
15
27
42
A
Short circuit load protection
T
mb ≤ 125˚C prior to overload
3
P
D(TO)
Overload power threshold
for protection
4
100
150
200
W
T
DSC
Characteristic time
which determines trip time
5
-
200
500
µs
Overtemperature protection
T
j(TO)
Threshold junction temperature
150
170
190
˚C
∆T
j(TO)
Hysteresis
6
3
1020˚C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 Normal operation will be resumed when P
D < PD(TO) and Tj < Tj(TO).
5 Trip time t
d sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
September 2001
5
Rev 1.100



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