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RBO08-40T Datasheet(PDF) 2 Page - STMicroelectronics |
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RBO08-40T Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() RBO08-40G / RBO08-40T 2/9 Symbol Parameter Value Unit IFSM Non repetitive surge peak forward current (Diode D1) tp=10ms 80 A IF DC forward current (Diode D1) Tc = 75°C 8 A PPP Peak pulse power between Input and Output (Transil T1) see note 1 Tj initial = 25°C 10/1000 µs 600 W PPP Peak pulse power between Pins 3 and 2 (10/1000µs) 1500 W Tstg Tj Storage temperature range Maximum junction temperature -40to + 150 150 °C TL Maximum lead temperature for soldering during 10 s at 4.5mm from case for TO220-AB 260 °C Note 1 : for a surge greater than the maximum value, the device will fail in short-circuit.. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Rth (j-c) Junction to case RBO08-40M RBO08-40T 2.4 2.4 °C/W THERMAL RESISTANCE D1 T1 2 3 1 VCL 31 VRM 31 VF13 V13 I13 IRM 31 IR 31 Ipp31 VBR 31 T2 IF Ipp32 VRM 32 VBR 32 VCL 32 3 2 1 V32 I32 IR32 IRM 32 |
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