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NE894M13 Datasheet(PDF) 2 Page - California Eastern Labs

Part # NE894M13
Description  NPN SILICON TRANSISTOR
PDF  9 Pages
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE894M13 Datasheet(HTML) 2 Page - California Eastern Labs

  NE894M13 Datasheet HTML 1Page - California Eastern Labs NE894M13 Datasheet HTML 2Page - California Eastern Labs NE894M13 Datasheet HTML 3Page - California Eastern Labs NE894M13 Datasheet HTML 4Page - California Eastern Labs NE894M13 Datasheet HTML 5Page - California Eastern Labs NE894M13 Datasheet HTML 6Page - California Eastern Labs NE894M13 Datasheet HTML 7Page - California Eastern Labs NE894M13 Datasheet HTML 8Page - California Eastern Labs NE894M13 Datasheet HTML 9Page - California Eastern Labs  
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Notes:
1.Operationinexcessofanyoneoftheseparametersmayresult
inpermanentdamage.
2.Withdevicemountedon1.08cm2X1.0mmglassepoxyboard.
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
CollectortoBaseVoltage
V
9
VCEO
CollectortoEmitterVoltage
V
3.0
VEBO
EmittertoBaseVoltage
V
1.5
IC
CollectorCurrent
mA
35
PT2
TotalPowerDissipation
mW
105
TJ
JunctionTemperature
°C
150
TSTG
StorageTemperature
°C
-65to+150
ABSOLUTE MAXIMUM RATINGS1(TA=25°C)
AmbientTemperature,TA(°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TYPICAL PERFORMANCE CURVES (TA=25°C)
CollectortoBaseVoltage,VCB(V)
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
150
125
100
75
50
25
0
105
Mounted on Glass epoxy PCB
(1.08 cm 2 x 1.0 mm (t) )
0
25
50
75
100
125
150
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
f = 1 MHz
NE894M13
VCE = 1 V
100
10
1
0.1
0.001
0.000 1
0.01
0.4
0.5
0.6
0.7
0.8
0.9
1.0
BasetoEmitterVoltage,VBE(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
40
30
20
10
0
0
1
2
3
4
5
500 µA
150 µA
200 µA
250 µA
300 µA
350 µA
400 µA
450 µA
100 µA
IB = 500 µA
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
CollectortoEmitterVoltage,VCE(V)
PART NUMBER
QUANTITY
NE894M13-A
50PCS(Nonreel)
NE894M13-T3-A
10kpcs/reel
ORDERING INFORMATION



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