PMST6428 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

PMST6428; PMST6429

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb ≤ 25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =30V

−

IE = 0; VCB =30V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

VCE =5V

PMST6428

IC = 0.01 mA

250

−

IC = 0.1 mA

250

650

IC = 1 mA

250

−

IC = 10 mA

250

−

DC current gain

VCE =5V

PMST6429

IC = 0.01 mA

500

−

IC = 0.1 mA

500

1250

IC = 1 mA

500

−

IC = 10 mA

500

−

VCEsat

collector-emitter saturation

voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

200

IC = 100 mA; IB = 5 mA; note 1

−

600

VBE

base-emitter voltage

IC = 1 mA; VCE = 5 V

560

660

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

3pF

emitter capacitance

IC =ic = 0; VEB = 0.5 V; f = 1 MHz

−

transition frequency

IC = 1 mA; VCE = 5 V; f = 100 MHz

100

700

MHz

PMST6428 Datasheet(PDF) 3 Page - NXP Semiconductors

PMST6428 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL