ISF1191

eq FQP47P06

P-Channel MOSFET Transistor

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID = -0.25mA

-60

-

-

V

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID = -0.25mA

-2

-

-4

V

RDS(on)

Drain-Source On-Resistance

VGS= -10V; ID= -23.5A

-

-

26

mΩ

IGSS

Gate-Source Leakage Current

VGS= ±25V;VDS=0V

-

-

±100

nA

IDSS

Drain-Source Leakage Current

VDS= -60V; VGS= 0V

-

-

-1

μ

A

VSD

Diode forward voltage

ISD= -47A; VGS = 0V

-

-

-4

V

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