 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IXFP10N80P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXFP10N80P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 2 page  ISF1196 eq IXFP10N80P N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V APPLICATIONS · Switching Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pulsed 30 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(J-c) Thermal Resistance Junction-to-Case 0.42 ℃ /W 3 2 1 TO-220C Package |
Similar Part No. - IXFP10N80P |
|
Similar Description - IXFP10N80P |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
