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STP4NB100 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STP4NB100 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISF1183 eq STP4NB100 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 3.8A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.4Ω(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 3.8 A IDM Drain Current-Single Pulse 15.2 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1 ℃ /W 3 2 1 TO-220C Package |
Similar Part No. - STP4NB100 |
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Similar Description - STP4NB100 |
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