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33797 Datasheet(PDF) 13 Page - Freescale Semiconductor, Inc |
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33797 Datasheet(HTML) 13 Page - Freescale Semiconductor, Inc |
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13 / 34 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 13 33797 ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 5. Dynamic Electrical Characteristics Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX; FEN 1 = FEN 2 = VDD; RR_LIMIT_X = 10 kΩ ±1%, RR_DIAG = 10 kΩ ±1%, -40°C ≤ TA ≤ +85°C, GND = 0 unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit SERIAL INTERFACE CLK Cycle Time (1/FCLK) (18) tCYC 200 – – ns CLK High Time (18) VCLK > VDD x 70% tHI 34 – – ns CLK Low Time (18) VCLK < VDD x 20% tLO 34 – – ns Clock Rise Time (18) VCLK = 20% VDD to 70% VDD, CLOAD = 100 pF tRISE – – 20 ns Clock Fall Time (18) VCLK = 70% VDD to 20% VDD, CLOAD = 100 pF tFALL – – 20 ns Data Out Rise Time (19) VDO = 20% VDD to 70% VDD, CLOAD = 100 pF tR – – 20 ns Data Out Fall Time (19) VDO = 70% VDD to 20% VDD, CLOAD = 100 pF tF – – 20 ns Chip Select Setup Time (19) CSB Before CLK tLEAD 62 – – ns Chip Select Hold Time (19) CLK Before CSB tLAG 62 – – ns Data In Setup Time (19) D1 Valid Before CLK tSU 30 – – ns Data In Hold Time (19) D1 Hold Time After CLK ↑ tH 30 – – ns Data Out Access Time (19) CSB to D0 Valid tA – – 62 ns Data Out Disable Time (19) CSB ↑ to D0 HI-Z tDIS – – 62 ns Data Out Valid Time (19) CLK ↑ to D0 Valid, C LOAD = 100 pF tV – – 75 ns Data Out Hold Time (19) D0 held After CLK ↑ tHO 0.0 – – ns Diagnostic Delay Time (Between Two Successive Commands) tDIAG 2.5 – – µs Notes 18 Determined by Design 19 Guaranteed by Characterization ↓ ↑ ↓ ↑ |
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