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MMBT2222A-G Datasheet(PDF) 3 Page - Comchip Technology |
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MMBT2222A-G Datasheet(HTML) 3 Page - Comchip Technology |
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3 / 3 page ![]() Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Collector Base Time Constant rb’CC IE = 20 mA, VCB = 20 V, — — 150 ps f = 31.8 MHz Delay Time (see fig. 1) td IB1 = 15 mA, IC = 150 mA, — — 10 ns VCC = 30V, VBE = -0.5 V Rise Time (see fig. 1) tr IB1 = 15 mA, IC = 150 mA, — — 25 ns VCC = 30V, VBE = -0.5 V Storage Time (see fig. 2) ts IB1 = IB2 = 15 mA, — — 225 ns IC = 150 mA, VCC = 30V Fall Time (see fig. 2) tf IB1 = IB2 = 15 mA, — — 60 ns IC = 150 mA, VCC = 30V < 2 ns 0 C * < 10 pF S 200 Ω 1.0 to 100 μs, DUTY CYCLE ≈ 2% +30V +16 V -2 V 1k Ω Scope rise time < 4ns *Total shunt capacitance of test jig, connectors and oscilloscope Switching Time Equivalent Test Circuit Figure 1. Turn-ON Time Figure 2. Turn-OFF Time 200 Ω +30V -4 V C < 10 pF S * 1.0 to 100 μs, DUTY CYCLE ≈ 2% 1k Ω < 20 ns 0 +16 V -14 V Page 3 Small Signal Transistor (NPN) MMBT2222A-G (RoHS Device) “-G” suffix designated RoHS compliant version |
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