FDD6680AS datasheet(1/4 Pages) BYCHIP

Part #	FDD6680AS

Description	N-channel Advanced Mode Power MOSFET

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	BYCHIP [BYCHIP ELECTRONICS CO., LIMITED]

Direct Link	http://www.bychip.cn/

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1 / 4 page

Symbol

Unit

VDS

V

VGS

V

IDM

A

IAS

A

EAS

mJ

TJ, TSTG

°C

A

Drain-to-Source Voltage

40

Gate-to-Source Voltage

±20

Value

Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)

Parameter

Junction & Storage Temperature Range

-55 to 150

Power Dissipation (4)

TC = 25°C

PD

125

W

TC = 100°C

50

Avalanche Current (3)

33

Avalanche Energy (3)

163

Pulsed Drain Current (2)

529

Continuous Drain

Current (1)

TC = 25°C

ID

150

TC = 100°C

115

0

2

4

6

8

10

24

68

10

VGS (V)

0

2

4

6

8

10

0

1

0

2

3040

50

Qg (nC)

RDS(ON) vs. VGS

Gate Charge

VDS = 20V

ID = 20A

N-channel Advanced Mode Power MOSFET

Features

 VDS=

40V, ID= 150A

RDS(ON) <

2 mΩ @ VGS = 10V

RDS(ON) <

3 mΩ @ VGS = 4.5V

●

Advanced Trench Technology

●

Provide Excellent RDS(ON) and Low Gate

Charge

●

Lead Free and Green Available

100% UIS TESTED!

100% ΔVds TESTED!

General Features

Pin Assignment

TO-252-2L Top View

Schematic Diagram

www.bychip.cn

FDD6680AS

v1.0

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FDD6680AS Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED

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