Electrical Characteristics (TA=25

unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

60

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

VGS=4.5V, ID=0.2A

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=0.5A

Forward Transconductance

gFS

VDS≥2.0V,ID=0.2A

80

-

-

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=10V,VGS=0V,

F=1.0MHz

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

-

-

10

nS

Reverse recovery time

rr

Turn-Off Delay Time

td(off)

-

-

VDD=50V,ID=0.5A

VGS=10V,RGEN=50Ω

-

Total Gate Charge

Qg

-

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,I S=0.3A

-

-

1.5

V

Diode Forward Current

(Note 2)

IS

-

-

0.3

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

%

4. Guaranteed by design, not subject to production

V

1.0

-

2.5

-

-

V

Ω

-

-

5.3

Ω

-

-

5.0

mS

PF

-

-

40

PF

-

-

30

PF

-

-

10

30

-

15

nS

nS

30

-

nC

A

-

±1.0

μA

t

VGS=0V,Is=0.3A

VR=25V, dls/dt=-100A/us