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ISC13009G Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISC13009G Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon NPN Power Transistor ISC13009G www.iscsemi.com 1 DESCRIPTION · Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) · Collector Saturation Voltage : VCE(sat) = 1.5 (Max) @ IC= 8.0A APPLICATIONS · Switching · Regulators · Inverters · Motor controls · Solenoid/Relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A IB Base Current 6 A PC Collector Power Dissipation TC=25℃ 120 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃ /W |
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Similar Description - ISC13009G |
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