RM40N40DF datasheet(4/7 Pages) RECTRON

4 / 7 page

Figure 7. Capacitance Variation

Figure 8. Gate• to• Source vs. Total Charge

VDS, DRAIN• TO• SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE ( )

VSD, SOURCE• TO• DRAIN VOLTAGE (V)

Figure 11. Safe Operating Area

Figure 12. I PEAK vs. Time in Avalanche

VDS (V)

TIME IN AVALANCHE (s)

VGS = 0 V

TJ = 25 C

f = 1 MHz

CISS

COSS

CRSS

VDS = 20 V

ID = 20 A

TJ = 25 C

QGS

QGD

VGS = 4.5 V

VDS = 20 V

ID = 20 A

td(off)

td(on)

TJ = 25 C

TJ = • 55 C

TJ (initial) = 100 C

TJ (initial) = 25 C

RDS(on) Limit

Thermal Limit

Package Limit

500 s

1 ms

10 ms

TC = 25 C

VGS 10 V

Single Pulse

1.E+00

1020

3040

100

0.001

0.2

0.4

0.6

0.8

1.0

1.2

1000

100

0.1

100

0.1

100

1E• 4

1E• 3

1E• 2

515

100

TJ = 125 C

VGS = 0 V

100

0.01

0.1

1.E+01

1.E+02

1.E+03

RATING AND CHARACTERISTICS CURVES (RM40N40DF)

RM40N40DF Datasheet(PDF) 4 Page - Rectron Semiconductor

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