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IXFN82N60Q3 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN82N60Q3 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 8 page  ISF1205 eq IXFN82N60Q3 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 66A@ TC=25℃ · Drain Source Voltage -VDSS=600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · PFC Circuits · AC and DC Motor Drives Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 66 A IDM Drain Current-Single Pulsed 240 A PD Total Dissipation @TC=25℃ 960 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.13 ℃ /W D G S S SOT-227 package |
Similar Part No. - IXFN82N60Q3 |
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Similar Description - IXFN82N60Q3 |
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