2-227
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16
1
13
14
15
GND
GND
RFIN
2
3
4
9
8
7
6
5
RF OUT
RF OUT
RF OUT
12
11
10
RF2162
3V 900MHz LINEAR AMPLIFIER
• 3V CDMA/AMPS Cellular Handsets
• 3V J-CDMA/TACS Cellular Handsets
• 3V TDMA/AMPS Cellular Handsets
• Spread-Spectrum Systems
• CDPD Portable Data Cards
• Portable Battery-Powered Equipment
The RF2162 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA/AMPS hand-held digital cellular equipment,
spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2162 has an analog
bias control voltage to maximize efficiency. The device is
self-contained with 50
Ω input and the output can be eas-
ily matched to obtain optimum power, efficiency, and lin-
earity characteristics. The device is packaged in a
compact 4mmx4mm, 16-pin, leadless chip carrier.
• Single 3V Supply
• 29dBm Linear Output Power
• 29dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
• 800MHz to 960MHz Operation
RF2162
3V 900MHz Linear Amplifier
RF2162 PCBA
Fully Assembled Evaluation Board
0
Rev A19 060208
12°
MAX
0.05
0.00
0.75
0.65
1.00
0.90
C
0.05
Dimensions in mm.
Shaded pin is lead 1.
A
4.00
2.00
1.50
SQ.
4.00
2
2.00
1.60
2 PLCS
0.10 C A
2 PLCS
0.10
C AB
M
3.20
2 PLCS
0.75
0.50
0.10 C B
2 PLCS
-B-
0.80
TYP
0.45
0.28
0.10 C A
2 PLCS
3.75
3.75
0.10 C B
2 PLCS
INDEX AREA
Package Style: QFN, 16-Pin, 4x4
Preliminary
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