I•CODE1 Chip Specification

Rev. 2.1

May 2000

SL040521.doc/M

Public

Page 15 of 22

13 Electrical Specifications

ABSOLUTE MAXIMUM RATINGS

1, 2

SYMBOL

PARAMETER

TEST

CONDITIONS

RATING

UNIT

Storage Temperature Range

°C

Junction Temperature

°C

ESD Voltage Immunity

MIL-STD-883D,

Method 3015.7,

Human Body Model

± 2

± 60

NOTES:

1. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and

Electrical Characteristics section of this specification is not implied.

2. This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive

static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.

OPERATING CONDITIONS

SYMBOL

PARAMETER

TEST

CONDITIONS

MIN

TYP

1

MAX

UNIT

Operating Ambient Temperature

- 25

+

70

°C

Operating Junction Temperature

- 25

+

85

°C

Input Current

30

Minimum Supply Voltage

2

for READ/EAS

Standard Mode

± 3.1

± 3.7

Minimum Supply Voltage

2

for WRITE

Standard Mode

± 3.6

± 4.1

Minimum Supply Voltage

2

for READ/EAS/WRITE

Fast Mode

± 5.2

± 6.5

Operating Frequency

3

13.553

13.560

13.567

MHz

NOTES:

1. Typical ratings are not guaranteed. These values listed are at room temperature.

3. Bandwidth limitation (±7 kHz) according to ISM band regulations.

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

TEST

CONDITIONS

MIN

TYP

1

MAX

UNIT

Input Capacitance between LA - LB

2

22.3

23.5

24.7

pF

Minimum Operating Supply Power

3

200

µW

Minimum Modulation of RF Voltage

for Demodulator Response

m

V

- V

V

+ V

max

min

max

min

=

10

14

%

Maximum Modulation of RF Voltage

for Demodulator Response

m

V

- V

V

+ V

max

min

max

min

=

30

%

Modulation Pulse Length

of RF Voltage

4

Standard Mode,

m

≥ 10 %

3.54

5.31

5

9.44

µs

Modulation Start-Pulse Length

of RF Voltage

4

Fast Mode,

m

≥ 10 %

15.34

17.11

5

21.24

µs

Demodulator Response Time

m

≥ 10 %

0.1

0.8

2.4

µs

Modulator ON Resistance

50

115

250

Ω

EEPROM Data Retention

10

Years

EEPROM Write Endurance

100 000

Cycles

NOTES:

1. Typical ratings are not guaranteed. These values listed are at room temperature.

2. Measured with an HP4285A LCR meter at 13.56 MHz.

3. Including losses in resonant capacitor and rectifier.

4. The given values are derived from the 13.56 MHz system frequency.

5. Recommended values for pulse duration generated at the read/write device.