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EMF44P03JS Datasheet(PDF) 3 Page - Excelliance MOS Corp.

Part # EMF44P03JS
Description  P-Channel Logic Level Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Manufacturer  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMF44P03JS Datasheet(HTML) 3 Page - Excelliance MOS Corp.

  EMF44P03JS Datasheet HTML 1Page - Excelliance MOS Corp. EMF44P03JS Datasheet HTML 2Page - Excelliance MOS Corp. EMF44P03JS Datasheet HTML 3Page - Excelliance MOS Corp. EMF44P03JS Datasheet HTML 4Page - Excelliance MOS Corp. EMF44P03JS Datasheet HTML 5Page - Excelliance MOS Corp. EMF44P03JS Datasheet HTML 6Page - Excelliance MOS Corp.  
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2019/8/7
p.3
EMF44P03JS
-V - Drain-Source Voltage( V )
0
0
4
0.5
DS
16
8
12
-3.0V
-2.5V
1.0
1.5
2.0
-4.0V
-3.5V
V = -4.5 V
GS
Typical output characteristics
2.5
T = 25°C
- V - Gate-Source Voltage( V )
5
0.04
0
0
0.02
0.06
1
2
GS
3
4
A
0.12
0.08
0.10
0.14
A
T = 125°C
7
6
8
9
10
I = - 3A
D
On-Resistance Variation with Gate-Source Voltage
Normalized on-Resistance v.s. Junction Temperature
T - Junction Temperature ( °C )
50
1.2
0.6
-50
0.8
1.0
J
-25
0
25
D
I = -4A
V = -4.5V
1.4
1.6
1.8
GS
150
100
75
125
DS
V = - 10V
Q - Gate Charge( nC )
0
0
1
2
g
4
8
I = - 4A
3
4
5
D
16
12
20
- 15V
Gate Charge Characteristics
- V , Drain-Source Voltage( V )
0
0
300
600
DS
5
10
Coss
Crss
900
1200
1500
Ciss
25
15
20
30
GS
f = 1 MHz
V = 0 V
Capacitance Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
T = 125°C
-V - Body Diode Forward Voltage( V )
0.6
0.0001
0
0.001
0.01
SD
0.2
0.4
25°C
V = 0V
0.1
1
10
GS
A
0.8
1.0
-55°C
1.2
TYPICAL CHARACTERISTICS



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