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ISG2106 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISG2106 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2106 eq SGL160N60UFD Ultrafast IGBT www.iscsemi.com 1 DESCRIPTION • High speed switching • High input impedance • Low saturation voltage APPLICATIONS • AC & DC motor controls • General purpose inverters • Servo controls ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 160 A IC Collector Current-Continuous @ TC=100℃ 80 A ICM Pulsed Collector Current 300 A IF Diode Forward Current @ TC100℃ 25 A IFM Diode Maximum Forward Current 280 A PD Power Dissipation @TC=25℃ 250 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 0.5 ℃ /W Rth j-c Thermal Resistance,Junction to Case diode 0.83 ℃ /W |
Similar Part No. - ISG2106 |
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Similar Description - ISG2106 |
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