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APT60D60B Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT60D60B Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 4 page ![]() APT60D60B_S(G) DYNAMIC CHARACTERISTICS Microsemi reserves the right to change, without notice, the specifications and information contained herein. 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 SINGLE PULSE 0.1 0.3 0.7 D = 0.9 0.05 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 t2 t1 Note: THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditions Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance Package Weight Maximum Mounting Torque Symbol RθJC RθJA W T Torque MIN TYP MAX .34 40 0.22 5.9 10 1.1 UNIT °C/W oz g lb•in N•m MIN TYP MAX - 40 - 130 - 220 - 4 - - 170 - 920 - 10 - - 80 - 1900 - 38 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRM Test Conditions I F = 60A, diF/dt = -200A/µs V R = 400V, TC = 25°C I F = 60A, diF/dt = -200A/µs V R = 400V, TC = 125°C I F = 60A, diF/dt = -1000A/µs V R = 400V, TC = 125°C I F = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C 0.129 0.211 0.0107 0.120 Dissipated Power (Watts) TJ (°C) TC (°C) Z EXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. |
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