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APTC60AM35SCTG Datasheet(PDF) 7 Page - Microsemi Corporation |
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APTC60AM35SCTG Datasheet(HTML) 7 Page - Microsemi Corporation |
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7 / 8 page ![]() APTC60AM35SCTG www.microsemi.com 7 – 8 TJ=25°C TJ=150°C 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 ID, Drain Current (A) VDS=400V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 120 0 20406080 100 120 ID, Drain Current (A) VDS=400V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 20406080 100 120 ID, Drain Current (A) VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 2 4 6 8 10 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy vs Gate Resistance VDS=400V ID=72A TJ=125°C L=100µH Hard Switching ZVS ZCS 0 20 40 60 80 100 120 140 160 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C |
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