AMIS-30624 datasheet(21/56 Pages) AMI

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AMIS-30624 I

2C Microstepping Motordriver

Data Sheet

As illustrated in Table 15, the state is depending on the previous state, the condition of the two switch controls (DriveLS and DriveHS)

and the output of HW_Cmp. Figure 11 shows an example of a practical case where a connection to VBAT is interrupted.

Tsw = 1024

µs

DriveHS

"R"-Comp

DriveLS

HW_Cmp

State

Tsw_on = 128

µs

Condition

R2VBAT

OPEN

R2VBAT

R2GND

Figure 11: Timing Diagram Showing the Change in States for HW Comparator

PC20060926.2

R2VBAT

A resistor is connected between VBAT and HW. Every 1024

µs SBOT is closed for a period of 128µs and a current is sensed. The output

of the I

R converter is low and the HW_Cmp output is high. Assuming the previous state was floating, the internal LOGIC will

interpret this as a change of state and the new state will be High (see also Table 15). The next time SBOT is closed the same condition is

observed. The previous state was high, so based on Table 15 the new state remains unchanged. This high state will be interpreted as

HW address = 1.

OPEN

In case the HW connection is lost (broken wire, bad contact in connector) the next time SBOT is closed this will be sensed. There will be

no current, the output of the corresponding I

R converter is high and the HW_Cmp will be low. The previous state was High. Based

on Table 15 one can see that the state changes to float. This will trigger a motion to secure position after a debounce time of 64 ms.

This prevents false triggering in case of micro interruptions of the power supply. See also Electrical Transient Conduction Along Supply

Lines.

R2GND

If a resistor is connected between HW and the GND, a current is sensed every 1024

µs when STOP is closed. The output of the top I

converter is low and as a result the HW_Cmp output switches to high. Again based on the stated diagram in Table 15 one can see that

the state will change to low. This low state will be interpreted as HW address = 0.

AMI Semiconductor

– Apr. 2007, Rev 3.1, M-20664-003

AMIS-30624 Datasheet(PDF) 21 Page - AMI SEMICONDUCTOR

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