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APTDF100H170G Datasheet(PDF) 2 Page - Microsemi Corporation |
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APTDF100H170G Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 3 page ![]() APTDF100H170G www.microsemi.com 2 - 3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 2.2 2.5 VF Diode Forward Voltage IF = 100A Tj = 125°C 2.1 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current VR = 1700V Tj = 125°C 500 µA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 572 trr Reverse Recovery Time Tj = 125°C 704 ns Tj = 25°C 20 Qrr Reverse Recovery Charge Tj = 125°C 35 µC Tj = 25°C 70 IRRM Reverse Recovery Current IF = 100A VR = 900V di/dt = 1000A/µs Tj = 125°C 100 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance 0.35 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 °C Torque Mounting torque To Heatsink M5 2.5 4.7 N.m Wt Package Weight 160 g SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : |
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