APTGF50DH60TG datasheet(4/6 Pages) MICROSEMI

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APTGF50DH60TG

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Typical Performance Curve

Output characteristics (VGE=15V)

TJ=-55°C

TJ=25°C

TJ=125°C

100

150

234

VCE, Collector to Emitter Voltage (V)

250µs Pulse Test

< 0.5% Duty cycle

Transfer Characteristics

TJ=-55°C

TJ=25°C

TJ=125°C

100

125

150

0123456

789

VGE, Gate to Emitter Voltage (V)

250µs Pulse Test

< 0.5% Duty cycle

Ic=100A

Ic=50A

Ic=25A

VGE, Gate to Emitter Voltage (V)

On state Voltage vs Gate to Emitter Volt.

TJ = 25°C

250µs Pulse Test

< 0.5% Duty cycle

Ic=100A

Ic=50A

Ic=25A

0.5

1.5

2.5

3.5

-50

-25

100

125

TJ, Junction Temperature (°C)

On state Voltage vs Junction Temperature

250µs Pulse Test

< 0.5% Duty cycle

VGE = 15V

0.70

0.80

0.90

1.00

1.10

1.20

-50

-25

255075

100 125

TJ, Junction Temperature (°C)

Breakdown Voltage vs Junction Temp.

-50 -25

75 100 125 150

TC, Case Temperature (°C)

DC Collector Current vs Case Temperature

Gate Charge

VCE=120V

VCE=300V

VCE=480V

255075

100 125 150 175 200

Gate Charge (nC)

IC = 50A

TJ = 25°C

Output Characteristics (VGE=10V)

TJ=-55°C

TJ=25°C

TJ=125°C

100

150

234

VCE, Collector to Emitter Voltage (V)

250µs Pulse Test

< 0.5% Duty cycle

APTGF50DH60TG Datasheet(PDF) 4 Page - Microsemi Corporation

APTGF50DH60TG Datasheet(HTML) 4 Page - Microsemi Corporation

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