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BTD5350EBPR Datasheet(PDF) 6 Page - BASIC SEMICONDUCTOR |
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BTD5350EBPR Datasheet(HTML) 6 Page - BASIC SEMICONDUCTOR |
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6 / 19 page ![]() www.basicsemi.com 6/19 Rev.0.3 Single-ChannelIsolatedGateDriver BTD5350x SYMBOL PARAMETER TESTCONDITIONS MIN TYP MAX UNIT SUPPLYCURRENTS IVCC1 Input supply quiescent current - - 1.4 2.4 mA IVCC2 Output supply quiescent current - - 1.3 1.8 SUPPLYVOLTAGEUNDERVOLTAGETHRESHOLDS VON1 VCC1-GND1 Positive-going UVLO threshold voltage - - 2.6 2.8 V VOFF1 VCC1-GND1 Negative-going UVLO threshold voltage - 2.4 2.5 - VUV, HYS1 VCC1-GND1 UVLO threshold hysteresis - - 0.1 - UVLOTHRESHOLDSBTD5350xCx VON2 VCC2-VEE2 Positive-going UVLO threshold voltage - - 12 13 V VOFF2 VCC2-VEE2 Negative-going UVLO threshold voltage - 10.3 11 - VUV, HYS2 VCC2-VEE2 UVLO threshold voltage hysteresis - - 1 - UVLOTHRESHOLDSBTD5350xBx VON2 VCC2-VEE2 Positive-going UVLO threshold voltage - - 8.7 9.4 V VOFF2 VCC2-VEE2 Negative-going UVLO threshold voltage - 7.3 8 - VUV, HYS2 VCC2-VEE2 UVLO threshold voltage hysteresis - - 0.7 - LOGICI/O VIH Positive-going input threshold voltage (IN+, IN-) - - 0.55×VCC1 0.7×VCC1 V VIL Negative-going input threshold voltage (IN+, IN-) - 0.35×VCC1 0.45×VCC1 - VIN, HYS Input Hysteresis voltage - - 0.1×VCC1 - IIH High-level input leakage at IN+ IN+=VCC1, VCC1=5V - 55 240 µA IIL Low-level input leakage at IN- IN-=GND1, VCC1=5V -240 -54 - IN-=GND1-5V, VCC1=5V -310 -108 - GATEDRIVERSTAGE IOH Peak source current IN+=HIGH, IN-=LOW, CL=470nF - 10 - A IOL Peak sink current IN+=LOW, IN-=HIGH, CL=470nF - 10 - VOH High level output voltage VCC2-OUT or VCC2-OUTH IOUT=+20mA IN+=HIGH, IN-=LOW - 60 - mV VOL Low level output voltage OUT-VEE2 or OUTL-VEE2 IOUT=-20mA IN+=LOW, IN-=HIGH 5 7 - mV MILLERCLAMPBTD5350Mx Vclamp Low-level clamp voltage Iclamp=20mA - 7 10 mV Iclamp Low-level clamp current VCLAMP=VEEx+15V 5 10 - A Vclamp-TH Clamping threshold voltage - - 2.2 - V SHORT-CIRCUITCLAMPING VCLP-OUT Clamping voltage (OUT-VCC2 or OUTH-VCC2) IN+=HIGH, IN–=LOW, tCLAMP=10µs, IOUTH or IOUT=-500mA - 1 1.3 V Clamping voltage (VEE2-OUT or VEE2-OUTL or VEE2-CLAMP) IN+=LOW, IN–=HIGH, tCLAMP=10µs, ICLAMP or IOUTL=500mA - 1.5 - IN+=LOW, IN–=HIGH, ICLAMP or IOUTL=20mA - 0.9 1 ACTIVEPULL-DOWNFUNCTION VOUTSD Active pulldown voltage on OUTL, CLAMP, OUT IOUT=-1A (sinking into OUT, OUTL or CLAMP pin), VCC2=left open - 2.3 2.6 V 7.5ElectricalCharacteristics TA=-40~125℃, VCC1=3.3 or 5V, VCC2=15V, CL(1)=100pF. Output pin: current towards outside of the chip is positive direction; Input pin: current towards inside of the chip is positive direction. |
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