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IXFN82N60P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFN82N60P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISFM1240 eq IXFN82N60P N-Channel MOSFET Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =3mA 600 - - V VGS(th) Gate Threshold Voltage VDS=VGS; ID =8mA 3.0 - 5.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 41A - - 75 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V - - ±200 nA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V - - 50 μ A VSD Diode Forward Voltage ISD= 82A, VGS= 0V - - 1.5 V PACKAGE OUTLINE (UNIT: mm) |
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