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APTGT300DA120G Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT300DA120G Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 5 page  APTGT300DA120G www.microsemi.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 500 µA Tj = 25°C 1.4 1.7 2.1 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 300A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 4 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Coes Output Capacitance 1.2 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.9 nF Td(on) Turn-on Delay Time 260 Tr Rise Time 30 Td(off) Turn-off Delay Time 420 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 300A RG = 1.8Ω 70 ns Td(on) Turn-on Delay Time 290 Tr Rise Time 50 Td(off) Turn-off Delay Time 520 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 300A RG = 1.8Ω 90 ns Eon Turn on Energy Tj = 125°C 30 Eoff Turn off Energy VGE = ±15V VBus = 600V IC = 300A RG = 1.8Ω Tj = 125°C 30 mJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 500 IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 700 µA IF DC Forward Current Tc = 80°C 300 A Tj = 25°C 1.6 2.1 VF Diode Forward Voltage IF = 300A VGE = 0V Tj = 125°C 1.6 V Tj = 25°C 170 trr Reverse Recovery Time Tj = 125°C 280 ns Tj = 25°C 27 Qrr Reverse Recovery Charge Tj = 125°C 54 µC Tj = 25°C 15 Er Reverse Recovery Energy IF = 300A VR = 600V di/dt =3000A/µs Tj = 125°C 27 mJ |
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