APTGT600DA60G

www.microsemi.com

1 - 5

Absolute maximum ratings

* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature greater

than 100°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

G2

E2

Q2

0/VBUS

OUT

CR1

VBUS

VBUS

OUT

0/VBUS

G2

E2

Symbol

Parameter

Max ratings

Unit

Collector - Emitter Breakdown Voltage

600

V

700 *

Continuous Collector Current

600 *

Pulsed Collector Current

800

A

Gate – Emitter Voltage

±20

V

Maximum Power Dissipation

2300

W

RBSOA

Reverse Bias Safe Operating Area

1200A @ 550V

Application

•

AC and DC motor control

•

Switched Mode Power Supplies

•

Power Factor Correction

Features

•

-

Low voltage drop

-

Low tail current

-

Switching frequency up to 20 kHz

-

Soft recovery parallel diodes

-

Low diode VF

-

Low leakage current

-

Avalanche energy rated

-

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Stable temperature behavior

•

Very rugged

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Easy paralleling due to positive TC of VCEsat

•

Low profile

•

RoHS Compliant

Boost chopper

Power Module