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APTM10DHM09TG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTM10DHM09TG Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM10DHM09TG www.microsemi.com 1 – 6 NTC2 S4 G4 VBUS SENSE VBUS Q1 G1 S1 OUT1 OUT2 Q4 CR3 0/VBUS CR2 0/VBUSSENSE NTC1 NTC2 OUT2 OUT1 VBUS VBUS SENSE S4 G4 S1 NTC1 0/VBUS 0/VBUS SENSE G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 139 ID Continuous Drain Current Tc = 80°C 100 IDM Pulsed Drain current 430 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 10 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Asymmetrical - Bridge MOSFET Power Module |
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