APTM50AM38SCTG

www.microsemi.com

8 – 8

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

25

50

75

100

00.511.522.5

33.5

Reverse Characteristics

0

200

400

600

800

1000

200

300

400

500

600

700

800

Capacitance vs.Reverse Voltage

0

500

1000

1500

2000

1

10

100

1000

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5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.