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APTM50DHM35G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTM50DHM35G
Description  Asymmetrical - bridge MOSFET Power Module
PDF  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DHM35G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTM50DHM35G
www.microsemi.com
1 – 6
G1
S1
S4
G4
CR3
VBUS
OUT2
0/VBUS
Q4
OUT1
CR2
Q1
S4
G4
VBUS
0/VBUS
S1
G1
OUT1
OUT2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
99
ID
Continuous Drain Current
Tc = 80°C
74
IDM
Pulsed Drain current
396
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
39
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
781
W
IAR
Avalanche current (repetitive and non repetitive)
51
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
3000
mJ
VDSS = 500V
RDSon = 35mΩ typ @ Tj = 25°C
ID = 99A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Switched Reluctance Motor Drives
Features
•
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Low profile
•
RoHS Compliant
Asymmetrical - bridge
MOSFET Power Module


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