UTG20N65L-TQ2-R datasheet(4/5 Pages) UTC

4 / 5 page

UTG20N65-S

Insulated Gate Bipolar Transistor

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R203-070.G



ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Off Characteristics

Collector-Emitter Breakdown Voltage

BVCES

650

Collector Cut-Off Current

ICES

VCE=650V, VGE=0V

μA

G-E Leakage Current

IGES

VCE=0V, VGE=±20V

±100

On Characteristics

Gate to Emitter Threshold Voltage

VGE(TH)

IC=250μA, VCE=VGE

4.6

6.5

Collector to Emitter Saturation Voltage

VCE(SAT)

IC=20A, VGE=15V

TC=25°C

1.65

2.1

TC=125°C

2.0

Dynamic Characteristics

Input Capacitance

CIES

VCE=25V, VGE=0V, f=1MHz

837

Output Capacitance

COES

Reverse Transfer Capacitance

CRES

Switching Characteristics

Total Gate Charge

VCE=520V, IC=20A, VGE=15V

53.5

Gate-Emitter Charge

QGE

Gate-Collector Charge

QGC

17.3

Turn-On Delay Time

tDON)

VCC=400V, IC=20A, RG=5Ω,

VGE=0~15V, L=1000uH

18.5

Rise Time

17.6

Turn-Off Delay Time

tDOFF)

Fall Time

82.4

Turn-On Switching Loss

EON

0.3

Turn-Off Switching Loss

EOFF

0.55

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Forward Voltage Drop

IF=20A

2.1

3.0

Reverse Recovery Time

trr

IF=20A, dI/dt=100A/μS, VCC=400V

58.6

Reverse Recovery Charge

Qrr

668

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