APTM100A13SCG

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7 – 7

Typical SiC Diode Performance Curve

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

Forward Characteristics

0

10

20

30

40

50

60

70

80

00.5

1

1.522.533.5

Reverse Characteristics

0

400

800

1200

1600

400

600

800 1000 1200 1400 1600

Capacitance vs.Reverse Voltage

0

400

800

1200

1600

2000

2400

2800

1

10

100

1000

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