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APTM120H57FTG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTM120H57FTG Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTM120H57FTG www.microsemi.com 1 – 6 S3 G3 S4 G4 NTC2 S1 G1 OUT2 OUT1 VBUS Q1 Q2 S2 G2 0/VBUS NTC1 Q3 Q4 OUT1 OUT2 NTC1 NTC2 G3 S3 VBUS G1 S1 G4 G2 S2 0/VBUS S4 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 1200 V Tc = 25°C 17 ID Continuous Drain Current Tc = 80°C 13 IDM Pulsed Drain current 68 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 684 m Ω PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 22 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 1200V RDSon = 570mΩ typ @ Tj = 25°C ID = 17A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Full - Bridge MOSFET Power Module |
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