EMD02N06TL8 datasheet(4/6 Pages) EXCELLIANCE

Part #	EMD02N06TL8

Description	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	EXCELLIANCE [Excelliance MOS Corp.]

Direct Link	http://www.excelliancemos.com/

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4 / 6 page

EMD02N06TL8

2020/4/1

P.4

Fig.7 Gate Charge Characteristics

Fig.8 Typical Capacitance

Characteristics

Fig 11. Effective Transient Thermal Impedance

Fig 9. Maximum Safe Operating Area

Fig 10. Single Pulse Maximum Power Dissipation

0.1

100

1000

0.1

100

VDS , Drain-to-Source Voltage (V)

50,000

100,000

150,000

200,000

250,000

0.0000010.00001 0.0001

0.001

0.01

0.1

T1 TIME(SEC)

120

150

QG , Total Gate Charge (nC)

100

1000

10000

100000

VDS , Drain-to-Source Voltage (V)

ID=50A

VDS=10V

Crss

Coss

Ciss

f=1MHz

VGS=0V

VGS=10V

Single Pulse

RθJC=0.6℃/W

TC=25℃

10us

10ms

100us

Single Pulse

RθJC=0.6℃/W

TC=25℃

1ms

0.0001

0.001

0.01

0.1

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-01

1.00E+00

time(sec)

Single Pluse

Duty cycle=0.5

0.1

0.05

0.02

0.01

0.2

1.Duty Cycle,D=

��

2. RθJC=0.6°C/W

3. TJ-TC=P*RθJC(t)

4. RθJC(t)=r(t)*RθJC

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