R.A.063099

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE

WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

DME375A

375 Watts, 50 Volts, Pulsed

Avionics 1025-1150 MHz

GENERAL DESCRIPTION

The DME375A is a high power COMMON BASE bipolar transistor.

It is

designed for pulsed systems in the frequency band 1025-1150 MHz. The device

has gold thin-film metallization for proven highest MTTF.

The transistor

includes input and output prematch for broadband capability.

Low thermal

resistance package reduces junction temperature, extends life.

CASE OUTLINE

55AW Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25!C

2

875 W

Maximum Voltage and Current

Maximum Temperatures

Storage Temperature

-65 to +200 !C

Operating Junction Temperature

+200 !C

ELECTRICAL CHARACTERISTICS @ 25!

!!!C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

F

= 1025 – 1150 MHz

375

W

Power Input

85

W

Power Gain

6.5

dB

"

c

Collector Efficiency

Vcc = 50 Volts

PW = 10 #sec

DF =

1%

40

%

VSWR

1

Load Mismatch Tolerance

F = 1090 MHz

FUNCTIONAL CHARACTERISTICS @ 25!

!!!C

Emitter to Base Breakdown

Ie = 20 mA

4.0

V

Collector to Emitter Breakdown

Ic = 25 mA

55

V

DC – Current Gain

Vce = 5V, Ic = 300 mA

10

Thermal Resistance

0.2

!C/W

NOTE 1: At rated output power and pulse conditions

2. At rated pulse conditions

.

Initial Issue June 1994