CDBQC0140L-HF

SMD Schottky Barrier Diode

QW-G1135

Page 1

REV:A

Io = 100 mA

VR = 40 Volts

RoHS Device

Halogen Free

Circuit Diagram

Features

- Low forward voltage.

- Designed for mounting on small surface.

- Extremely thin package.

- Majority carrier conduction.

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

High-Reliability and High-Performance

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.018(0.45)

0.026(0.65)

BSC.

0.012(0.30)

0.008(0.20)

Mechanical data

- Case: 0402C/SOD-923F standard package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

- Weight: 0.001 grams (approx.).

- Polarity: Indicated by cathode band.

Symbol

Typ

Parameter

Conditions

Min

Max

Unit

Forward voltage

IF = 10mA

IF = 100mA

VF

V

0.34

0.55

Reverse current

Capacitance between terminals

VR = 10V

f = 1MHz, and 10 VDC reverse voltage

IR

CT

µA

pF

6

30

Maximum Rating (at TA=25°C unless otherwise noted)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Typ

IO

VR

VRRM

Average forward rectified current

Reverse voltage

Repetitive peak reverse voltage

Forward current, surge peak

Symbol

Parameter

Conditions

Min

Max

Unit

V

V

mA

100

40

45

IFSM

8.3 ms single half sine-wave superimposed

on rate load (JEDEC method)

1

A

+125

°C

TSTG

Tj

Storage temperature

Junction temperature

°C

+125

-40

mW

125

PD

Power dissipation

°C/W

260

Thermal resistance

Junction to ambient

RθJA