N0030L

Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and

extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and

security requirements is the responsibility of the Buyer. These resources are subject to change without notice.

InterFET

IF35508.R01

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Technical

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N0030L Process Geometry

Features

• Low Input Capacitance: 5.0pF Typical

• Low Gate Leakage: 10pA Typical

• High Breakdown Voltage: -30V Typical

• High Input Impedance

• Small Die: 365um X 365um X 203um

• Bond Pads: 90um X 90um

• Substrate Connected to Gate

• Au Back-Side Finish

Applications

• Low-Noise, High Gain Amplifier

• Small Signal Amplifier

• Custom Part Options

Description

The InterFET N0030L Geometry is targeted high

impedance low leakage applications. The low

input capacitance makes it ideal for higher

frequency applications.

Test

Pattern

Geometry Top View

G

G

S-D

30

Standard Parts

• IFN5911, IFN5912

Maximum Ratings (@ T

A

= 25°C, Unless otherwise specified)

Parameters

Min

Typ

Max

Unit

VRGS Reverse Gate to Source or Drain Voltage

-25

-30

V

IFG

Continuous Forward Gate Current

10

mA

TJ

Operating Junction Temperature

-55

150

°C

TSTG Storage Temperature

-65

175

°C

Product Summary

Parameters

Min

Typ

Max

Unit

BVGSS

Gate to Source Breakdown Voltage

-25

-30

V

IDSS

Drain to Source Saturation Current

2

40

mA

VGS(off)

Gate to Source Cutoff Voltage

-0.5

-10

V

GFS

Forward Transconductance

11

mS

S-D