MMD60R400RFZ

Datasheet

Dec. 2022 Revision 1.0

Magnachip Semiconductor Ltd.

2

Parameter

Symbol

Rating

Unit

Note

Drain - Source voltage

VDSS

600

V

Gate - Source voltage

VGSS

±

25

V

Continuous drain current (1)

ID

11.0

A

TC=25 oC

7.0

A

TC=100 oC

Pulsed drain current (2)

IDM

33.0

A

Power dissipation

PD

69.4

W

Single - pulse avalanche energy (3)

EAS

220

mJ

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

Diode dv/dt ruggedness (4)

dv/dt

50

V/ns

Storage temperature

Tstg

-

55 ~150

oC

Maximum operating junction

temperature

Tj

150

oC

1)

Id limited by maximum junction temperature

2)

Pulse width tP limited by Tj,max

3)

IAS : 1.5A

4)

ISD ≤ ID, di/dt = 1000A/μs, VDS peak ≤ V(BR)DSS, VDD= 400V, Tj=25oC

Parameter

Symbol

Value

Unit

Thermal resistance, junction-case max

Rthjc

1.80

oC/W

Thermal resistance, junction-ambient max

Rthja

40.7

oC/W



Thermal Characteristics



Absolute Maximum Rating (Tc=25oC unless otherwise specified)