MS2209

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

DESCRIPTION:

DESCRIPTION:

DESCRIPTION:

The MS2209 is a broadband, high peak pulse power silicon NPN

bipolar device specifically designed for avionics applications requiring

broad bandwidth with moderate duty cycles and pulse width

constraints such as ground/ship based DME/TACAN.

This device is also designed for specialized applications including

JTIDS applications when duty cycle is moderately higher. Gold

metallization and emitter ballasting assure high reliability under Class

C amplifier operation.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)

Symbol

Parameter

Value

Unit

Collector Supply Voltage

50

V

Device Current

7.0

A

Power Dissipation

220

W

Junction Temperature (RF Pulsed Operation)

+200

°°°°C

Storage Temperature

-65 to +200

°°°°C

Thermal Data

Thermal Data

Thermal Data

Thermal Data

Junction-case Thermal Resistance

0.80

°°°°C/W

Features

Features

Features

Features

•

225 MHz BANDWIDTH

•

COMMON BASE

•

GOLD METALLIZATION

•

CLASS C OPERATION

•

POUT = 90 W MIN. WITH 13 dB GAIN

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

Rev A 09-2005