DMPH4015SPSWQ

Document number: DS42321 Rev. 2 - 2

2 of 7

www.diodes.com

July 2024

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DMPH4015SPSWQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-40

V

Gate-Source Voltage

VGSS

±25

V

Continuous Drain Current VGS = -10V (Note 5)

Steady State

TC = +25°C

TC = +100°C

ID

-50

-35

A

Continuous Drain Current VGS = -10V (Note 6)

Steady State

TA = +25°C

TA = +100°C

ID

-12.0

-9.0

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

-100

A

Maximum Body Diode Continuous Current (Note 5)

IS

-50

A

Avalanche Current L = 1mH

IAS

-22

A

Avalanche Energy L = 1mH

EAS

260

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 7)

TA = +25°C

PD

1.5

W

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RθJA

98

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

57

°C/W

Thermal Resistance, Junction to Case (Note 5)

RθJC

0.9

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-40

—

—

V

VGS = 0, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

—

-1

µA

VDS = -40V, VGS = 0

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±25V, VDS = 0

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-1.5

-2

-2.5

V

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)

—

8

10

m

Ω

VGS = -10V, ID = -9.8A

—

11

14

VGS = -4.5V, ID = -9.8A

Diode Forward Voltage

VSD

—

-0.7

-1

V

VGS = 0, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

4234

—

pF

VDS = -20V, VGS = 0

f = 1MHz

Output Capacitance

Coss

—

1036

—

Reverse Transfer Capacitance

Crss

—

526

—

Gate Resistance

Rg

—

7.8

—

Ω

VDS = 0, VGS = 0, f = 1MHz

Total Gate Charge (VGS = -4.5V)

Qg

—

42.7

—

nC

VDS = -20V

ID = -9.8A

Total Gate Charge (VGS = -10V)

Qg

—

91

—

Gate-Source Charge

Qgs

—

14.2

—

Gate-Drain Charge

Qgd

—

13.5

—

Turn-On Delay Time

tD(ON)

—

13.2

—

ns

VGS = -10V, VDD = -20V

Rg = 6Ω, ID = -1A

Turn-On Rise Time

tR

—

10

—

Turn-Off Delay Time

tD(OFF)

—

303

—

Turn-Off Fall Time

tF

—

138

—

Reverse-Recovery Time

tRR

—

26

—

ns

IF = -9.8A, di/dt = -100A/µs

Reverse-Recovery Charge

QRR

—

20

—

nC

IF = -9.8A, di/dt = -100A/µs

Notes:

5. Thermal resistance from junction to soldering point (on the exposed drain pad).

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.