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L6382D Datasheet(PDF) 17 Page - STMicroelectronics |
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L6382D Datasheet(HTML) 17 Page - STMicroelectronics |
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17 / 22 page ![]() L6382D Block description 17/22 7.3 Drivers ● LSD (Low Side Driver): it consists of a level shifter from 3.3V logic signal (LSI) to Vcc MOS driving level; conceived for the half-bridge low-side power MOS, it is able to source and sink 120mA (min). ● HSD (Level Shifter and High Side Driver): it consists of a level shifter from 3.3V logic signal (HGI) to the high side gate driver input up to 600V. Conceived for the half-bridge high-side power MOS, the HSG is able to source and sink 120mA. ● PFD (Power Factor Driver): it consists of a level shifter from 3.3V logic signal (PFI) to Vcc MOS driving level: the driver is able to source 120mA from Vcc to PFG (turn-on) and to sink 250mA to GND (turn-off); it is suitable to drive the MOS of the PFC pre- regulator stage. ● HED (Heat Driver): it consists of a level shifter from 3.3V logic signal (HEI) to Vcc MOS driving level; the driver is able to source 30mA from Vcc to HEG and to sink 75mA to GND and it is suitable for the filament heating when they are supplied by independent winding. ● Bootstrap Circuit: it generates the supply voltage for the high side Driver (HSD). A patented integrated bootstrap section replaces an external bootstrap diode. This section together with a bootstrap capacitor provides the bootstrap voltage to drive the high side power MOSFET. This function is achieved using a high voltage DMOS driver which is driven synchronously with the low side external power MOSFET. For a safe operation, current flow between BOOT pin and Vcc is always inhibited, even though ZVS operation may not be ensured. 7.4 Internal logic, over current protection (OCP) and interlocking function The DIM (Digital Input Monitor) block manages the input signals delivered to the drivers ensuring that they are low during the described start-up procedure; the DIM block controls the L6382D behaviour during both save and operating modes. When the voltage on pin CSI overcomes the internal reference of 0.5V (typ.) the block latches the fault condition: in this state the OCP block forces low both HSG and LSG signals while CSO will be forced high. This condition remains latched until LSI and HSI are simultaneously low and CSI is below 0.5V. This function is suitable to implement an over current protection or hard-switching detection by using an external sense resistor. As the voltage on pin CSI can go negative, the current must be limited below 2mA by external components. Another feature of the DIM block is the internal interlocking that avoids cross-conduction in the half-bridge FET's: if by chance both HGI and LGI input's are brought high at the same time, then LSG and HSG are forced low as long as this critical condition persists. |
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